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Journal of Nanoscience Letters 2013, 3: 24
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Research Article
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Room-temperature light-emitting diodes by using randomly distributed n-ZnS nanowires/p-SiC heterojunction
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Hui Ying Yanga, De Hui Lib, Siu Fung Yuc, JI. Wonga, Qi Hua Xiongb,d
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a Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 138682
b Division of Physics and Applied Physics, School of Physical and Mathematical Sciences,
Nanyang Technological University, Singapore 637371
c Departments of Applied Physics, The Hong Kong Polytechnic University, Hung Hum, Kowloon, Hong Kong
d Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Abstract |
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A light-emitting heterojunction diode was realized by randomly growth of n-ZnS nanowires, which were synthesized in a home-built vapor transport system, on a p-type SiC substrate. The heterojunction exhibits diode-like rectifying voltage-current behavior with turn-on voltage and reverse bias leakage current equal to ~7 V and = 30 μA respectively. Emission bands with peak wavelengths of ~406, ~478 and ~573 nm are also measured from the room-temperature electroluminescence spectra. These emission bands are related to radiative recombination between electrons from donor levels and holes from either valence band or acceptor level of the ZnS nanowires.
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Keywords |
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ZnS nanowires; Electroluminescence; Light-emitting diodes
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