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Physics Express 2012, 2: 5
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Research Article
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Femtosecond laser induced formation and crystallization of Si nanoclusters in SiOx films
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V.A. Volodina,b, T.T. Korchaginaa, A.K. Gutakovskya, L.I. Fedinaa, M.A. Neklyudovaa,b, A.V. Latysheva,b, J. Jedrzejewskic, I. Balbergc, J. Kochd, B.N. Chichkovd
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a A.V.Rzhanov Institute of Semiconductor Physics SB RAS, Lavrent’eva ave., 13, 630090, Novosibirsk, Russia
b Novosibirsk State University, Pirogova street, 2, 630090, Novosibirsk, Russia
c Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
d Laser Zentrum Hannover, Hollerithallee 8, 30419 Hannover, Germany
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Abstract |
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A femtosecond pulse laser irradiation (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) was applied for treatment of SiOx films of various stoichiometry. The as-deposited and treated films were studied using Raman spectroscopy and electron microscopy techniques. The laser assisted formation of amorphous Si nanoclusters in SiOx films with stoichiometry parameter x close to 2 were observed. We found laser fluence for crystallization of amorphous Si nanoclusters in SiOx films with stoichiometry parameter x < 2. The approach we developed can be used for the modification of size and phase composition of Si nanoclusters in SiOx films that were deposited on various substrates.
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Keywords |
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Silicon nanoclusters; Laser pulse annealing; Raman scattering; SiOx films
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