|
|
|
| |
World's one of the largest Research
Career Network |
|
|
|
Benefits |
- Academic & Industry jobs
- Project funding
- Visiting faculty positions
- Visiting scientist positions
- Invited talks
- and more...
|
|
|
|
|
|
|
|
Register FREE
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Global Journal of Physical Chemistry. Volume 2, Issue 2 (2011) pp. 217-221
|
|
|
Research Article
|
Free Article
|
|
|
|
|
|
Interface study of annealed a-C/W bi-layers prepared by RF sputtering
|
|
|
|
H.S. Ousmane, E. Ech-chamikh, M. Azizan, Y. Ijdiyaou, A. Essafti
|
|
|
|
|
|
|
|
Laboratoire de Physique du Solide et des Couches Minces, Faculté des Sciences Semlalia
Université Cadi ayyad, BP: 2390, Marrakech 4000, Maroc
|
|
|
|
|
|
|
|
Abstract |
|
|
|
Bi-layers of amorphous carbon on tungsten (a-C/W) have been deposited on crystalline silicon substrates by Radio-Frequency (RF) sputtering. Carbon films were deposited from a high purity graphite target with a RF power of 250 Watts while those of tungsten were obtained from a pure tungsten target at two different RF powers of 100 and 300 Watts. Annealing effects, at 800 K, 900 K and 1000 K in vacuum conditions, on the structure and the interface state of the samples were studied by Grazing Incidence X-rays Reflectometry (GIXR) and Diffraction (GIXD) techniques. The GIXR measurements show that the a-C/W interface remains abrupt up to 800 K. The GIXD measurements reveal that W films deposited at 100 Watts are amorphous-like whereas those deposited at 300 Watts are polycrystalline in the ß-W phase. After annealing at 1000 K, a formation of W2C at the a-C/W interface is revealed by GIXD measurements.
|
|
|
|
|
|
|
Keywords |
|
|
|
Received 15 Oct 2010; Accepted 13 Nov 2010; Available Online 30 May 2011
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|